1/3 STPS2060CT ? august 2002 - ed : 1d power schottky rectifier i f(av) 2x10a v rrm 60 v v f (max) 0.58 v main product characteristics n negligible switching losses n low forward drop voltage n low capacitance n high reverse avalanche surge capability features and benefits high voltage dual schottky rectifier suited to switch mode power supplies and other power converters. packaged in to-220ab, this device is intended for use in medium voltage operation, and particularly, in high frequency circuitries where low switching losses are required. description to-220ab a1 a2 k symbol parameter value unit v rrm repetitive peak reverse voltage 60 v i f(rms) rms forward current per diode 30 a i f(av) average forward current tcase = 120c v r = 60v d = 0.5 per diode per device 10 20 a i fsm surge non repetitive forward cur- rent tp=10ms sinusoidal per diode 200 a i rrm repetitive peak reverse current tp=2 m s f = 1khz per diode 1 a i rsm non repetitive peak reverse cur- rent tp = 100 m s per diode 1 a t stg storage temperature range - 65 to + 150 c tj maximum junction temperature 150 dv/dt critical rate of rise of reverse voltage 10000 v/ m s absolute r atings (limiting values) a1 a2 k
STPS2060CT 2/3 symbol parameter test conditions min. typ. max. unit i r * reverse leakage cur- rent v r =v rrm t j = 25c 70 m a t j = 125c 33 ma v f** forward voltage drop i f =20a t j = 125c 0.8 v i f =10a t j = 125c 0.58 0.67 i f =20a t j = 25c 0.94 c capacitance 60 v, 1mhz tj = 125c 150 pf pulse test : * t p = 5 ms, duty cycl e<2% ** tp = 380 m s, duty cycl e<2% to evaluate the conduction losses use the following equation : p=0.54xi f(av) + 0.013 x i f 2 (rms) electrical static characteristics (per diode) symbol parameter value unit r th(j-c) junction to case per diode 1.6 c/w total 0.9 r th(c) coupling 0.15 c/w when the diodes 1 and 2 are used simultaneously : tj-tc(diode 1)=p(diode1) x rth(j-c)(per diode) + p(diode 2) x rth(c) thermal resistances
STPS2060CT 3/3 ref. dimensions millimeters inches min. max. min. max. a 4.30 4.60 0.169 0.181 c 1.22 1.32 0.048 0.052 d 2.40 2.72 0.094 0.107 e 0.33 0.70 0.013 0.028 f 0.61 0.93 0.024 0.037 f1 1.14 1.70 0.045 0.067 f2 1.14 1.70 0.045 0.067 g 4.95 5.15 0.195 0.202 g1 2.40 2.70 0.094 0.106 h2 10.00 10.40 0.394 0.409 l2 16.00 typ. 0.630 typ. l4 13.00 14.00 0.512 0.551 l5 2.65 2.95 0.104 0.116 l6 14.80 15.75 0.583 0.620 l7 6.20 6.60 0.244 0.260 l9 3.40 3.94 0.134 0.155 m 2.60 typ. 0.102 typ. dia. 3.75 3.89 0.148 0.153 package mechanical data to-220ab m h2 l2 a c l4 f1(x2) d f2 f g l9 l6 l7 l5 g1 e dia optional information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap- proval of stmicroelectronics. the st logo is a registered trademark of stmicroelectronics ? 2002 stmicroelectronics - printed in italy - all rights reserved. stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany hong kong - india - israel - italy - japan - malaysia - malta - morocco - singapore spain - sweden - switzerland - united kingdom - united states. http://www.st.com
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